About Author

Dr. Indranil Chatterjee

Airbus Defence & Space


Indranil Chatterjee (SM’19, M’14) received his M.S. and Ph.D. degrees in electrical engineering from Vanderbilt University, Nashville, TN, USA. From 2014 to 2016, he worked as a Postdoctoral Scientist in GaN power device development and reliability with the Centre for Device Thermography and Reliability at the University of Bristol, UK. In 2016, he joined the Defence and Space division of Airbus in Friedrichshafen, Germany as a Semiconductor Radiation Effects and Reliability Engineer where he is involved in R&D, design, radiation and reliability analysis of critical electronic systems for earth-observation, navigation, and, telecommunication satellites, and interplanetary probes. His research interests include Radiation Tolerance of Semiconductor Devices, Semiconductor Device Physics, Reliability, and Novel Devices. Dr. Chatterjee is a Senior Member of IEEE, and has authored and co-authored more than 50 papers in premiere international journals and conferences and has delivered keynotes, and invited talks in US, Asia, and Europe.

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